MRF5S21100HSR5【PDF 1/10 页】MOSFET RF N-CHAN 28V 23W NI-780S

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HIVE INF

RMATI

RCHIVE INFORMATION

MRF5S21100HR3 MRF5S21100HSR3

RF Device Data

Freescale Semiconductor

RF Power Field Effect Transistors

N--Channel Enhancement--Mode Lateral MOSFETs

Designed for W--CDMA base station applications with frequencies from 2110

to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier

applications. To be used in Class AB for PCN--PCS/cellular radio and WLL

applications.

Typical 2--carrier W--CDMA Performance: VDD

=28Volts,IDQ

= 1050 mA,

Pout

= 23 Watts Avg., f = 2167.5 MHz, Channel Bandwidth = 3.84 MHz,

PAR = 8.5 dB @ 0.01% Probability on CCDF.

Power Gain ? 13.5 dB

Drain Efficiency ? 26%

IM3 @ 10 MHz Offset ? --37 dBc in 3.84 MHz Channel Bandwidth

ACPR @ 5 MHz Offset ? --40 dBc in 3.84 MHz Channel Bandwidth

Capable of Handling 10:1 VSWR, @ 28 Vdc, 2140 MHz, 100 Watts CW

Output Power

Features

Characterized with Series Equivalent Large--Signal Impedance Parameters

Internally Matched for Ease of Use

Qualified Up to a Maximum of 32 VDD

Operation

Integrated ESD Protection

Lower Thermal Resistance Package

Low Gold Plating Thickness on Leads, 40μ″

Nominal.

RoHS Compliant

In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.

Table 1. Maximum Ratings

Rating

Symbol

Value

Unit

Drain--Source Voltage

VDSS

--0.5, +65

Vdc

Gate--Source Voltage

VGS

--0.5, +15

Vdc

Total Device Dissipation @ TC

=25°C

Derate above 25°C

273

1.56

W/°C

Storage Temperature Range

Tstg

-- 65 to +150

°C

Case Operating Temperature

150

°C

Operating Junction Temperature

200

°C

Table 2. Thermal Characteristics

Characteristic

Symbol

Value

(1,2)

Unit

Thermal Resistance, Junction to Case

Case Temperature 80°C, 100 W CW

Case Temperature 78°C, 23 W CW

RθJC

0.57

0.64

°C/W

1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF

calculators by product.

2. Refer to AN1955,

Thermal Measurement Methodology of RF Power Amplifiers.

Go to http://www.freescale.com/rf.

Select Documentation/Application Notes -- AN1955.

Document Number: MRF5S21100H

Rev. 4, 12/2010

Freescale Semiconductor

Technical Data

MRF5S21100HR3

MRF5S21100HSR3

2110--2170 MHz, 23 W AVG., 28 V

2xW--CDMA

LATERAL N--CHANNEL

RF POWER MOSFETs

CASE 465--06, STYLE 1

NI--780

MRF5S21100HR3

CASE 465A--06, STYLE 1

NI--780S

MRF5S21100HSR3

Freescale Semiconductor, Inc., 2006, 2010.

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